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STP100N6F7

Model STP100N6F7  |  Category other
USD / unit (reference)

STP100N6F7. Packaging: Tube; Part Status: Active; Mounting Type: Through Hole; Supplier Device Package: TO-220

PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current – Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1980 pF @ 25 V
FET Feature
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Grade
Qualification
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
Base Product NumberSTP100
StockIn Stock
Bulk pricing & lead time: +86 13246607911 · info@winchipgroup.com

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