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SiSS23DN-T1-GE3

Model SiSS23DN-T1-GE3  |  Category discrete
USD / unit (reference)

SiSS23DN-T1-GE3 — Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs. Series: TrenchFET®; Packaging: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®; Part Status: Active; Mounting Type: Surface Mount

MfrVishay Siliconix
SeriesTrenchFET®
PackagingTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current – Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs4.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs300 nC @ 10 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds8840 pF @ 15 V
FET Feature
Power Dissipation (Max)4.8W (Ta), 57W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S
Package / CasePowerPAK® 1212-8S
Base Product NumberSISS23
StockIn Stock
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