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SI2319CDS-T1-GE3

Model SI2319CDS-T1-GE3  |  Category discrete
USD / unit (reference)

SI2319CDS-T1-GE3 — Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs. Series: TrenchFET®; Packaging: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®; Part Status: Not For New Designs; Mounting Type: Surface Mount

MfrVishay Siliconix
SeriesTrenchFET®
PackagingTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part StatusNot For New Designs
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current – Continuous Drain (Id) @ 25°C4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs77mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds595 pF @ 20 V
FET Feature
Power Dissipation (Max)1.25W (Ta), 2.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3
Base Product NumberSI2319
StockIn Stock
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