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SI2316BDS-T1-GE3

Model SI2316BDS-T1-GE3  |  Category discrete
USD / unit (reference)

SI2316BDS-T1-GE3 — Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs. Series: TrenchFET®; Packaging: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®; Part Status: Obsolete; Mounting Type: Surface Mount

MfrVishay Siliconix
SeriesTrenchFET®
PackagingTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current – Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs50mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.6 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 15 V
FET Feature
Power Dissipation (Max)1.25W (Ta), 1.66W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Grade
Qualification
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3
Base Product NumberSI2316
StockIn Stock
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