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SI2301CDS-T1-GE3

Model SI2301CDS-T1-GE3  |  Category discrete
USD / unit (reference)

SI2301CDS-T1-GE3 — Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs. Series: TrenchFET®; Packaging: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®; Part Status: Active; Mounting Type: Surface Mount

MfrVishay Siliconix
SeriesTrenchFET®
PackagingTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current – Continuous Drain (Id) @ 25°C3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs112mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds405 pF @ 10 V
FET Feature
Power Dissipation (Max)860mW (Ta), 1.6W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Grade
Qualification
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3
Base Product NumberSI2301
StockIn Stock
Bulk pricing & lead time: +86 13246607911 · info@winchipgroup.com

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