IRFB4229PBF — Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs. Series: HEXFET®; Packaging: Tube; Part Status: Active; Mounting Type: Through Hole
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V |
| Current – Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 26A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 4560 pF @ 25 V |
| FET Feature | – |
| Power Dissipation (Max) | 330W (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | – |
| Qualification | – |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Base Product Number | IRFB4229 |
| Stock | In Stock |