IPW65R099C6FKSA1. Packaging: Tube; Part Status: Not For New Designs; Mounting Type: Through Hole; Supplier Device Package: PG-TO247-3-1
| Packaging | Tube |
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current – Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 12.8A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
| Gate Charge (Qg) (Max) @ Vgs | 127 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2780 pF @ 100 V |
| FET Feature | – |
| Power Dissipation (Max) | 278W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | – |
| Qualification | – |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3-1 |
| Package / Case | TO-247-3 |
| Base Product Number | IPW65R099 |
| Stock | In Stock |