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IPW65R065C7XKSA1

Model IPW65R065C7XKSA1  |  Category other
USD / unit (reference)

IPW65R065C7XKSA1. Packaging: Tube; Part Status: Active; Mounting Type: Through Hole; Supplier Device Package: PG-TO247-3

PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current – Continuous Drain (Id) @ 25°C33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs65mOhm @ 17.1A, 10V
Vgs(th) (Max) @ Id4V @ 850µA
Gate Charge (Qg) (Max) @ Vgs64 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3020 pF @ 400 V
FET Feature
Power Dissipation (Max)171W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Grade
Qualification
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3
Package / CaseTO-247-3
Base Product NumberIPW65R065
StockIn Stock
Bulk pricing & lead time: +86 13246607911 · info@winchipgroup.com

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