IMW120R060M1HXKSA1. Packaging: Tube; Part Status: Active; Mounting Type: Through Hole; Supplier Device Package: PG-TO247-3-41
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current – Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 13A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 5.6mA |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 18 V |
| Vgs (Max) | +23V, -7V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 800 V |
| FET Feature | – |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | – |
| Qualification | – |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3-41 |
| Package / Case | TO-247-3 |
| Base Product Number | IMW120 |
| Stock | In Stock |