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FQPF27P06

Model FQPF27P06  |  Category discrete
USD / unit (reference)

FQPF27P06 — Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs. Series: QFET®; Packaging: Tube; Part Status: Active; Mounting Type: Through Hole

Mfronsemi
SeriesQFET®
PackagingTube
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current – Continuous Drain (Id) @ 25°C17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs70mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs43 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 25 V
FET Feature
Power Dissipation (Max)47W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F-3
Package / CaseTO-220-3 Full Pack
Base Product NumberFQPF27
StockIn Stock
Bulk pricing & lead time: +86 13246607911 · info@winchipgroup.com

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