Home / All Products / APT28M120B2
WinChip

APT28M120B2

Model APT28M120B2  |  Category other
USD / unit (reference)

APT28M120B2. Packaging: Tube; Part Status: Active; Mounting Type: Through Hole; Supplier Device Package: T-MAX™ [B2]

PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200 V
Current – Continuous Drain (Id) @ 25°C29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs560mOhm @ 14A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs300 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds9670 pF @ 25 V
FET Feature
Power Dissipation (Max)1135W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Grade
Qualification
Mounting TypeThrough Hole
Supplier Device PackageT-MAX™ [B2]
Package / CaseTO-247-3 Variant
Base Product NumberAPT28M120
StockIn Stock
Bulk pricing & lead time: +86 13246607911 · info@winchipgroup.com

« Back to all products