The 110 °C rated VOM618A has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4 pin 100 mil lead pitch miniflat package. It features a high current transfer ratio with low input current, low coupling capacitance, and high isolation voltage. These coupling devices are designed for signal transmission between two electrically separated circuits.
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